specifications and information are subject to change without notice. triquint semiconductor inc ? phone 1-503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 1 of 9 july 2010 ah420 4w high linearity ingap hbt amplifier product features ? 400 ? 2700 mhz ? +35.7 dbm p1db ? -49 dbc aclr @ 26 dbm ? 14 db gain @ 2140 mhz ? 800 ma quiescent current ? +5 v single supply ? mttf > 100 years ? lead-free/green/rohs-compliant 12-pin 4x5mm dfn package applications ? final stage amplifiers for repeaters ? high power amplifiers ? mobile infrastructure ? lte / wcdma / edge / cdma product description the ah420 is a high dynamic range amplifier in a low-cost surface mount package. the ingap/gaas hbt is able to achieve high performance with -49 dbc aclr and +35.7 dbm of compressed 1db power, operating off of a single +5v supply. it is housed in a lead-free/green/rohs- compliant 4x5mm dfn package. all devices are 100% rf and dc tested. the ah420 is targeted for use as a final stage amplifier in wireless infrastructure repeaters or as driver stages for high power amplifiers where high pe rformance is required. in addition, the amplifier can be used for a wide variety of other applications within the 400 to 2700 mhz frequency band. by operating off of a single +5v rail, other higher voltage rails are not necessarily needed thus saving system costs. the amplifier also has the flexibility to operate at higher voltage levels to ac hieve higher compression if needed by the system. functional diagram function pin no. rf in 3,4,5,6 rf out 7,8,9,10 i ref 12 v bias 1 nc 2,11 specifications parameter units min typ max operational bandwidth mhz 400 2700 test frequency mhz 2140 output channel power dbm +26 gain db 13 14 16 input return loss db 12 output return loss db 7.4 aclr (2) dbc -49 output p1db dbm +35.7 output ip3 (4) dbm +46.5 +50 quiescent collector current ( 3 ) ma 710 800 900 iref ma 20 vcc, vbias v +5 1. test conditions unless otherwise noted: 25oc, +5v vsupply, 2140 mhz, in tuned application circuit. 2. w-cdma 3gpp test model 1+64 dpch, par = 10.2 db @ 0.01% probability, 3.84 mhz bw 3. this corresponds to the quiescent current under sma ll-signal conditions into pins 6, 7, and 8 when the current setting resistor, r4 connected to the iref pin, is at 82 ? . 4. oip3 is measured with two tones at out an output power of +27 dbm/tone separated by 1 mhz. the suppression on the largest im3 product is used to calculate the 3oip using a 2:1 rule. absolute maximum ratings parameter rating storage temperature -65 to +150 c vcc, vbias +14 v rf input power, cw, 50 , t=25 c input p9db reference current, iref 170 ma dissipated power, pmax 7 w max junction temperature, t j for 10 6 hours mttf 158 c thermal resistance, jc 10.6 c / w operation of this device above any of th ese parameters may cause permanent damage. typical performance parameter units typical frequency mhz 940 1960 2140 channel power dbm +27 +27 +26 gain db 16 14.1 14 input return loss db 14 19 12 output return loss db 6.4 7 7.4 aclr (2) dbc -46.5 -48 -49 output p1db dbm +35.2 +35.6 +35.7 noise figure db 6.6 5.3 5.6 output ip3 (4) dbm +50 +49 +50 quiescent collector current ( 3 ) ma 800 iref ma 20 vcc, vbias v +5 5. the amplifier has been tested for ruggedness to be capable of handling: 10:1 vswr @ 5vcc, 2140mhz, +35.2dbm cw pout, 25 c 10:1 vswr @ 5vcc, 940mhz, +28.5dbm is-95a pout, 25 c 10:1 vswr @ 5vcc, 2140mhz, +26.5dbm wcdma pout, 25 c ordering information part no. description ah420-eg 4w high linearity ingap hbt amplifier ah420-epcb900 920-960 mhz evaluation board ah420-epcb1960 1930-1990 mhz evaluation board ah420-epcb2140 2110-2170 mhz evaluation board standard t/r size = 1000 pieces on a 7? reel.
specifications and information are subject to change without notice. triquint semiconductor inc ? phone 1-503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 2 of 9 july 2010 ah420 4w high linearity ingap hbt amplifier application circuit pc board layout v pd gnd v cc gnd circuit board material: 0.014? getek , single layer, 1 oz copper, r = 4.2, microstrip line details: width = .030?, marker spacing = .050? baseplate configuration notes: 1. please note that for reliable operation, the eval uation board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. the use of a convection fan is also recommended in laboratory environments. 2. the area around the module underneath the pc b should not contain any soldermask in order to maintain good rf grounding.
specifications and information are subject to change without notice triquint semiconductor inc ? phone 1-503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 3 of 9 july 2010 ah420 4w high linearity ingap hbt amplifier typical device data s-parameters (v cc = +5 v, i cc = 800 ma, 25 c, unmatched 50 ohm system) 0246 frequency (ghz) gain / maximum stable gain -40 -20 0 20 40 60 gain (db) db(gmax()) ah420_eg db(|s(2,1)|) ah420_eg 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s11 swp max 6ghz swp min 0.01ghz s(1,1) ah420_eg 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s22 swp max 6ghz swp min 0.01ghz s(2,2) ah420_eg notes: the gain for the unmatched device in 50 ohm system is shown as th e trace in black color. for a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain . the maximum stable gain is shown in the red line. s-parameters (v cc = +5 v, i cq = 800 ma, 25 c, unmatched 50 ohm system, calibrated to device leads) freq (mhz) s11 (db) s11 (deg) s21 (db) s21 (deg) s12 (db) s12 (deg) s22 (db) s22 (deg) 10 -1.22 -176.79 29.97 155.67 -52.77 64.11 -1.61 -39.70 50 -0.44 -177.23 24.42 117.15 -45.04 32.25 -1.05 -122.90 100 -0.31 -178.77 19.17 103.73 -44.01 11.29 -1.16 -150.31 300 -0.28 179.40 10.27 90.61 -43.22 5.32 -0.94 -169.59 500 -0.30 178.17 6.16 84.91 -43.10 -0.42 -0.93 -174.28 700 -0.40 176.72 3.74 79.16 -43.48 36.07 -1.02 -177.33 900 -0.43 175.77 2.09 74.69 -41.72 5.11 -1.07 -177.23 1100 -0.50 173.96 0.99 69.01 -41.21 -1.08 -1.11 -178.10 1300 -0.59 171.86 0.42 62.55 -40.35 -4.63 -1.15 -178.55 1500 -0.74 169.75 0.16 55.48 -39.33 -10.41 -1.21 -179.14 1700 -0.98 167.20 0.25 46.05 -38.86 -20.47 -1.24 -179.88 1900 -1.40 164.19 0.63 34.50 -38.13 -34.84 -1.24 179.85 2100 -2.04 161.94 1.22 18.13 -36.71 -51.74 -1.19 179.15 2300 -2.78 163.47 1.53 -4.61 -35.70 -78.76 -0.95 178.06 2500 -2.88 169.61 0.74 -32.66 -36.03 -114.19 -0.62 175.59 2700 -2.04 171.93 -1.59 -58.88 -37.72 -145.67 -0.52 171.28 2900 -1.32 169.73 -4.55 -77.51 -39.74 -179.01 -0.55 168.08 3100 -0.95 167.05 -7.58 -90.68 -41.31 163.85 -0.68 165.55 3300 -0.78 164.66 -10.52 -100.04 -42.50 141.73 -0.80 164.25 3500 -0.69 162.98 -13.08 -106.66 -43.74 129.82 -0.87 162.92 3700 -0.63 161.89 -15.60 -112.19 -42.73 112.53 -0.90 162.24 3900 -0.61 161.39 -17.79 -116.53 -43.74 105.15 -0.92 161.57 4100 -0.58 161.33 -19.66 -121.50 -43.35 107.61 -0.92 161.67 4300 -0.54 161.51 -21.87 -124.38 -42.62 97.03 -0.97 162.11 device s-parameters are available for download off of the website at: http://www.tqs.com
specifications and information are subject to change without notice triquint semiconductor inc ? phone 1-503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 4 of 9 july 2010 ah420 4w high linearity ingap hbt amplifier 920-960 mhz reference d esign (ah420-epcb900) w-cdma 3gpp test model 1+64 dpch, par = 10.2 db @ 0.01% probability, 3.84 mhz bw typical w-cdma performance at 25 c frequency (mhz) 920 940 960 units channel power +27 +27 +27 dbm power gain 15.9 16 16.1 db input return loss 17 14 11 db output return loss 5.3 6.4 8.0 db aclr -47 -46.5 -46.5 dbc p1db +35.2 +35.2 +35.2 dbm output ip3 at 27dbm/tone, 1mhz spacing +51 +50 +49 dbm noise figure 6.5 6.6 6.7 db quiescent current, icq 800 ma vpd, vcc +5 v c8 c22 c7 fb1 l1 r2 r4 c3 c4 c5 c6 c12 c15 c13 c14 c17 r1 c1 r3 d1 c2 notes: 1. the primary rf microstrip line is 50 . 2. do not exceed 5.5v on vpd and vcc or damage will occur to d1. 3. components shown on the silkscreen but not on the schematic are not used. 4. vpd used for device power down (low=rf off) 5. the edge of c13 is placed at 75mil from ah420 rfout pin. (3.9 o @ 940 mhz) 6. the edge of c15 is placed 145mil from the edge of c13. (7.5 o @ 940 mhz) 7. the edge of c14 is placed at 150mil from ah420 rfin pin. (7.7 o @ 940 mhz) 8. the edge of c17 is placed against the edge of c14. 9. 0 jumpers can be replaced with copper trace in target application. gain vs. frequency t=25c 14 15 16 17 18 0.90 0.92 0.94 0.96 0.98 frequency (ghz) gain (db) return loss t=25c -25 -20 -15 -10 -5 0 0.90 0.92 0.94 0.96 0.98 frequency (ghz) s11, s22 (db) s11 s22 35 40 45 50 55 20 22 24 26 28 30 oip3 (dbm) output power (dbm) oip3 vs. output power/tone vs. temperature f=940 mhz +25c -40c +85c -65 -60 -55 -50 -45 -40 -35 15 16 17 18 19 20 21 22 23 24 25 aclr (dbc) output power (dbm) aclr vs. output average power vs. frequency t=25c 920 mhz 940 mhz 960 mhz w-cdma 3gpp test model 1+64 dpch par = 10.2 db @ 0.01% probability 3.84 mhz bw 42 44 46 48 50 52 24 25 26 27 28 29 30 oip3 (dbm) output power (dbm) oip3 vs. output power/tone vs. frequency t=25c 920 mhz 940 mhz 960 mhz p1db vs. frequency vs. temperature 33 34 35 36 37 920 930 940 950 960 frequency (mhz) p1db (dbm) +25c -40c +85c current vs output average power vs. frequency t=25c 850 900 950 1000 1050 1100 24 25 26 27 28 29 30 output power (dbm) collector current (ma) 920 mhz 940 mhz 960 mhz noise figure vs. frequency t=25c 4 5 6 7 8 0.90 0.92 0.94 0.96 0.98 frequency (ghz) nf (db) efficiency vs output aver age power vs. frequency t=25c 0 5 10 15 20 24 25 26 27 28 29 30 output power (dbm) collector efficiency (%) 920 mhz 940 mhz 960 mhz
specifications and information are subject to change without notice triquint semiconductor inc ? phone 1-503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 5 of 9 july 2010 ah420 4w high linearity ingap hbt amplifier 1930-1990 mhz reference design (ah420-epcb1960) w-cdma 3gpp test model 1+64 dpch, par = 10.2 db @ 0.01% probability, 3.84 mhz bw typical w-cdma performance at 25 c frequency (mhz) 1930 1960 1990 u nits channel power +27 +27 +27 dbm power gain 13.4 14.1 14.1 db input return loss 13 19 11 db output return loss 4.7 7 12 db aclr -49 -48 -47 dbc p1db +35.6 +35.6 +35.6 dbm output ip3 at 27dbm/tone, 1mhz spacing +49 +49 +49 dbm noise figure 5.6 5.3 5.3 db quiescent current, icq 800 ma vpd, vcc +5 v c8 c9 c10 c11 c7 fb1 l1 r2 r4 c3 c4 c5 c6 c12 c16 c15 c13 c14 c17 c2 r1 c1 r3 d1 notes: 1. the primary rf microstrip line is 50 . 2. do not exceed 5.5v on vpd and vcc or damage will occur to d1. 3. components shown on the silkscreen but not on the schematic are not used. 4. vpd used for device power down (low=rf off) 5. the edge of c13 is placed at 75mil from ah420 rfout pin. (8.0 o @ 1960 mhz) 6. the edge of c15 is placed 50mil from the edge of c13. (5.3 o @ 1960 mhz) 7. the edge of c16 is placed 345mil from the edge of c15. (37 o @ 1960 mhz) 8. the edge of c14 is placed at 160mil from ah420 rfin pin. (17.2 o @ 1960 mhz) 9. the edge of c17 is placed 95mil from the edge of c14. (10.2 o @ 1960 mhz) 10. 0 jumpers can be replaced with copper trace in target application. gain vs. frequency t=25c 10 11 12 13 14 15 1.92 1.94 1.96 1.98 2.00 frequency (ghz) gain (db) return loss t=25c -25 -20 -15 -10 -5 0 1.92 1.94 1.96 1.98 2.00 frequency (ghz) s11, s22 (db) s11 s22 aclr vs. output average power vs. frequency t=25c -60 -55 -50 -45 -40 -35 24 25 26 27 28 29 output power (dbm) aclr (dbc) 1930 mhz 1960 mhz 1990 mhz current vs output average power vs. frequency t=25c 800 850 900 950 1000 1050 24 25 26 27 28 29 output power (dbm) collector current (ma) 1930 mhz 1960 mhz 1990 mhz 4 5 6 7 8 1.90 1.92 1.94 1.96 1.98 2.00 nf (db) frequency (ghz) noise figure vs. frequency t=25c
specifications and information are subject to change without notice triquint semiconductor inc ? phone 1-503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 6 of 9 july 2010 ah420 4w high linearity ingap hbt amplifier 2010-2025 mhz application circuit performance plots td-scdma 3 carrier, par = 10 db @ 0.01% probability, 1.28 mhz bw typical td-scdma performance at 25 c frequency (mhz) 2010 2015 2025 units channel power 24 24 24 dbm power gain 13.6 13.6 13.7 db input return loss 22 21 20 db output return loss 4.8 5 5.1 db aclr -50 -50 -50 dbc p1db +34 +34 +34 dbm output ip3 at +25 dbm/tone, 1mhz spacing +56 +56 +55 dbm noise figure 5.5 5.5 5.5 db quiescent current, icq 800 ma vpd +5 v vcc +5 v fb1 l1 r2 r4 c15 c13 c17 r3 c16 c23 notes: 1. the primary rf microstrip line is 50 . 2. components shown on the silkscreen but not on the schematic are not used. 3. the edge of c13 is placed at 70 mil from ah420 rfout pin. (7.7 o @ 2015 mhz) 4. the edge of c15 is placed nex to the edge of c13. 5. the edge of c16 is placed 30 mil from the edge of c15. (3.3 o @ 2015 mhz) 6. the edge of c14 is placed at 145 mil from ah420 rfin pin. (16 o @ 2015 mhz) 7. the edge of c17 is placed 115 mil from the edge of c14. (12.7 o @ 2015 mhz) 10 11 12 13 14 15 2.00 2.01 2.02 2.03 2.04 gain (db) frequency (ghz) gain vs. frequency t=25c -30 -25 -20 -15 -10 -5 0 2.00 2.01 2.02 2.03 2.04 s11, s22 (db) frequency (ghz) return loss t=25c s11 s22 800 825 850 875 18 19 20 21 22 23 24 25 26 collector current (ma) output power (dbm) current vs output average power vs. frequency t=25c 2010 mhz 2015 mhz 2025 mhz -60 -58 -56 -54 -52 -50 -48 -46 -44 -42 -40 19 20 21 22 23 24 25 aclr (dbc) output power (dbm) aclr vs. output average power vs. frequency t=25c 2010 mhz 2015 mhz 2025 mhz
specifications and information are subject to change without notice triquint semiconductor inc ? phone 1-503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 7 of 9 july 2010 ah420 4w high linearity ingap hbt amplifier 2110-2170 mhz reference design (ah420-epcb2140) w-cdma 3gpp test model 1+64 dpch, par = 10.2 db @ 0.01% probability, 3.84 mhz bw typical w-cdma performance at 25 c frequency (ghz) 2110 2140 2170 units channel power +26 +26 +26 dbm power gain 13.3 14 14 db input return loss 14 12 10 db output return loss 5 7.4 9 db aclr -50 -49 -50 dbc p1db +35.8 +35.7 +35.2 dbm output ip3 at 27dbm/tone, 1mhz spacing +49 +50 +50 dbm noise figure 5.8 5.6 5.5 db quiescent current, icq 800 ma vpd, vcc +5 v c8 c20 c21 c22 c7 fb1 l1 r2 r4 c3 c4 c5 c6 c12 c16 c15 c13 c14 c17 c2 r1 c1 r3 d1 notes: 1. the primary rf microstrip line is 50 . 2. do not exceed 5.5v on vpd and vcc or damage will occur to d1. 3. components shown on the silkscreen but not on the schematic are not used. 4. vpd used for device power down (low=rf off) 5. the edge of c13 is placed at 65mil from ah420 rfout pin. (7.6 o @ 2140 mhz) 6. the edge of c15 is placed 60mil from the edge of c13. (7.0 o @ 2140 mhz) 7. the edge of c16 is placed 340mil from the edge of c15. (39.9 o @ 2140 mhz) 8. the edge of c14 is placed at 155mil from ah420 rfin pin. (18.2 o @ 2140 mhz) 9. the edge of c17 is placed 205mil from the edge of c14. (24.0 o @ 2140 mhz) 10. 0 jumpers can be replaced with copper trace in target application. gain vs. frequency t=25c 10 11 12 13 14 15 2.10 2.12 2.14 2.16 2.18 2.20 frequency (ghz) gain (db) return loss t=25c -25 -20 -15 -10 -5 0 2.10 2.12 2.14 2.16 2.18 2.20 frequency (ghz) s11, s22 (db) s11 s22 aclr vs. output average power vs. frequency t=25c -60 -55 -50 -45 -40 -35 24 25 26 27 28 29 output power (dbm) aclr (dbc) 2110 mhz 2140 mhz 2170 mhz aclr vs. output average power vs. temperature -65 -60 -55 -50 -45 -40 23 24 25 26 27 28 output power (dbm) aclr (dbc) +25c -40c +85c oip3 vs. output power / tone vs. frequency 35 40 45 50 55 20 22 24 26 28 30 output power / tone (dbm) oip3 (dbm) 2140 mhz 2110 mhz 2170 mhz 35 40 45 50 55 20 22 24 26 28 30 oip3 (dbm) output power (dbm) oip3 vs. output power/tone vs. temperature f=2140 mhz +25c -40c +85c p1db vs. frequency vs. temperature 34 35 36 37 38 2.10 2.12 2.14 2.16 2.18 2.20 frequency (ghz) p1db (dbm) +25c -40c +85c current vs output average power vs. frequency t=25c 800 850 900 950 1000 1050 24 25 26 27 28 29 output power (dbm) collector current (ma) 2110 mhz 2140 mhz 2170 mhz noise figure vs. frequency t=25c 4 5 6 7 8 2.10 2.12 2.14 2.16 2.18 2.20 frequency (ghz) nf (db)
specifications and information are subject to change without notice triquint semiconductor inc ? phone 1-503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 8 of 9 july 2010 ah420 4w high linearity ingap hbt amplifier 2.3-2.4 ghz application circuit performance plots 802.16-2004 o-fdma, 64qam-1/2, 1024-fft, 20 symbols and 30 subchannels, 5 mhz carrier bw typical o-fdma performance at 25 c frequency (ghz) 2.3 2.35 2.4 units channel power +27 +27 +27 dbm gain 12.8 13.2 13.6 db input return loss 18 16 13 db output return loss 4 5.2 7.3 db evm 2 1.9 2 % operating current, icc 955 920 890 ma collector efficiency 10.4 11 11 % quiescent current, icq 800 ma vcc, vpd +5 v c8 c22 c7 fb1 l1 r2 r4 c3 c4 c5 c6 c12 c15 c13 c14 c17 r1 c1 r3 d1 c21 c20 c2 circuit board material: 0.014? getek , single layer, 1 oz copper, r = 4.2, microstrip line details: width = .030?, spacing = .030? notes: 1. the primary rf microstrip line is 50 . 2. do not exceed 5.5v on vpd or vcc or damage to d1 will occur. 3. components shown on the silkscreen but not on the schematic are not used. 4. c1 & c12 can be replaced with a copper trace. 5. 0 jumpers can be replaced with coppe r trace in target application. 6. the edge of c17 is placed 55 mil from the ah420 rfin pin. (7.1 o @ 2.35 ghz) 7. the edge of c14 is placed 70 mil from the edge of c17. (9.0 o @ 2.35 ghz) 8. the edge of c13 is placed 55 mil from the ah420 rfout pin. (7.1 o @ 2.35 ghz) 9. the edge of c15 is placed 70 mil from the edge of c13. (9.0 o @ 2.35 ghz) 10 11 12 13 14 15 2.25 2.30 2.35 2.40 2.45 gain (db) frequency (ghz) gain vs. frequency t=25c -30 -25 -20 -15 -10 -5 0 2.25 2.30 2.35 2.40 2.45 s11, s22 (db) frequency (ghz) return loss t=25c s11 s22 0 1 2 3 4 5 20 22 24 26 28 30 evm (%) output power (dbm) evm vs. output average power vs. frequency t=25c 2.3 ghz 2.35 ghz 2.4 ghz 802.16-2004 o-fdma, 64qam- 1/2, 1024-fft, 20 symbols and 30 subchannels, 5 mhz carrier bw 800 850 900 950 1000 1050 1100 1150 22 23 24 25 26 27 28 29 30 collector current (ma) output power (dbm) current vs output average power vs. frequency t=25c 2.3 ghz 2.35 ghz 2.4 ghz 0 5 10 15 20 20 22 24 26 28 30 collector efficiency (%) output power (dbm) efficiency vs output average power vs. frequency t=25c 2.3 ghz 2.35 ghz 2.4 ghz -60 -55 -50 -45 -40 -35 -30 20 22 24 26 28 30 aclr (dbc) output power (dbm) aclr vs. output average power vs. frequency t=25c 2.3 ghz 2.35 ghz 2.4 ghz w-cdma 3gpp test model 1+64 dpch, par=10.3 db @ 0.01% probability, 3.84 mhz bw
specifications and information are subject to change without notice triquint semiconductor inc ? phone 1-503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 9 of 9 july 2010 ah420 4w high linearity ingap hbt amplifier mechanical information this package is lead-free/gr een/rohs-compliant. the plating materi al on the backside metallization is matte tin. it is compat ible with both lead-free (maximum 260 c reflow temperature) and lead (maximum 245 c reflow temperature) soldering processes. outline drawing mounting configuration / land pattern notes: 1. a heatsink underneath the area of the pcb for th e mounted device is recommended for proper thermal operation. damage to the device can occur without the use of one. 2. ground / thermal vias are critical for the proper perform ance of this device. vias should use a .35mm (#80 / .0135?) diameter drill and have a final pl ated thru diameter of .25 mm (.010?). 3. add as much copper as possible to inner and out er layers near the part to ensure optimal thermal performance. 4. mounting screws can be added near the part to fa sten the board to a heatsink. ensure that the ground / thermal via region contacts the heatsink. 5. do not put solder mask on the backside of the pc board in the region where the board contacts the heatsink. 6. rf trace width depends upon the pc board material and construction. 7. use 1 oz. copper minimum. 8. all dimensions are in millimeters product marking the ah420 will be mark ed with an ?ah420g? designator with a lot code marked below the part designator. the ?y? represents the last digit of the year the part was manufactured, the ?xxx? is an auto-gener ated number, and ?z? refers to a wafer number in a lot batch. tape and reel specifications for this part are located on the website in the ?application notes? section. esd / msl information esd rating: class 1a value: passes 250v to <500v test: human body model (hbm) standard: jedec standard jesd22-a114 esd rating: class iv value: passes 1000v min. test: charged device model (cdm) standard: jedec standard jesd22-c101 msl rating: level 3 at +260 c convection reflow standard: jedec standard j-std-020 functional pin layout pin function 1 vbias 2, 11 no connect 3, 4, 5, 6 rf input 7, 8, 9, 10 vcc / rf output 12 iref ah420g yxxx-z
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